职称：研究员、助理教授

导师类别：博士生导师

研究所：物理电子所

研究领域：纳电子学，二维材料，低功耗电子学

电子邮件：wupeng[at]pku.edu.cn

教育与工作经历：

2024至今北京大学电子学院研究员、助理教授

2021-2024麻省理工学院电子学研究实验室博士后

2015-2021普渡大学电子与计算机工程学院博士

2011-2015清华大学微纳电子系本科

代表性论文：

Peng Wu, Dayane Reis, Xiaobo Sharon Hu, Joerg Appenzeller, “Two-dimensional transistors with reconfigurable polarities for secure circuits,”Nature Electronics4, 45-53 (2021).

Peng Wu, Tarek Ameen, Huairuo Zhang, Leonid A. Bendersky, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Albert V. Davydov, Joerg Appenzeller, “Complementary Black Phosphorus Tunneling Field Effect Transistors,”ACS Nano13, 377-385 (2018).

Peng Wu, Joerg Appenzeller, “Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor Without a Ferroelectric Component,”ACS Nano15, 5158– 5164 (2021).

Peng Wu, Joerg Appenzeller, “Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents,”IEEE Electron Device Letters40, 981-984 (2019).

Peng Wu, Joerg Appenzeller, “Design Considerations for 2-D Dirac-Source FETs—Part I: Basic Operation and Device Parameters,”IEEE Transactions on Electron Devices69(8), 4674–4680 (2022).

Peng Wu, Joerg Appenzeller, “Design Considerations for 2-D Dirac-Source FETs—Part II: Nonidealities and Benchmarking,”IEEE Transactions on Electron Devices69(8), 4681–4685 (2022).

Peng Wu, Joerg Appenzeller, “Explaining Steep-Slope Switching in Carbon Nanotube Dirac-Source Field-Effect Transistors,”IEEE Transactions on Electron Devices69(9), 5270-5275 (2022).

Peng Wu, Mengyuan Li, Bo Zhou, Xiaobo Sharon Hu, Joerg Appenzeller, “Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept,”IEEE Transactions on Electron Devices69(11), 6078-6084 (2022).

Peng Wu, Jing Kong, “Doping for ohmic contacts in 2D transistors,”Nature Electronics7, 519-520 (2024) (News & Views).

Peng Wu, Tianyi Zhang, Jiadi Zhu, Tomás Palacios, Jing Kong, “2D materials for logic device scaling,”Nature Materials23, 23-25 (2024) (Feature).

Peng Wu, “Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes,”Nature Electronics6, 836–838 (2023) (Matters Arising).

Peng Wu, Jianfeng Jiang, Lian-Mao Peng, “Setting a standard for benchmarking 2D transistors with silicon,”Nature Reviews Electrical Engineering(2024) (Comment).