Assistant Professor
Institute of Physical Electronics
Research interests: Nanoelectronics, 2D materials, low-power electronics, steep-slope transistors
Email: wupeng[at]pku.edu.cn
Wu, Pengis an Assistant Professor at School of Electronics, Peking University. He received his Ph.D. degree in Electrical and Computer Engineering from Purdue University in 2021, and B.S. degree in Microelectronics from Tsinghua University in 2015. Before joining Peking University, he worked as a Postdoctoral Associate at Research Laboratory of Electronics, Massachusetts Institute of Technology.
Dr. Wu's research interests include nanoscale transistors based on 2D materials, low-power steep-slope transistors, including tunnel FET and cold-source/Dirac-source FET, and novel computing systems based on nano materials for beyond CMOS applications, such as hardware security and in-memory computing.
Selected Publications:
Peng Wu, Dayane Reis, Xiaobo Sharon Hu, Joerg Appenzeller, "Two-dimensional transistors with reconfigurable polarities for secure circuits," Nature Electronics 4, 45-53 (2021).
Peng Wu, Tarek Ameen, Huairuo Zhang, Leonid A. Bendersky, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Albert V. Davydov, Joerg Appenzeller, "Complementary Black Phosphorus Tunneling Field Effect Transistors," ACS Nano 13, 377-385 (2018).
Peng Wu, Joerg Appenzeller, "Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor Without a Ferroelectric Component," ACS Nano 15, 5158– 5164 (2021).
Peng Wu, Joerg Appenzeller, "Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents," IEEE Electron Device Letters 40, 981-984 (2019).
Peng Wu, Joerg Appenzeller, "Design Considerations for 2-D Dirac-Source FETs—Part I: Basic Operation and Device Parameters," IEEE Transactions on Electron Devices 69 (8), 4674–4680 (2022).
Peng Wu, Joerg Appenzeller, "Design Considerations for 2-D Dirac-Source FETs—Part II: Nonidealities and Benchmarking," IEEE Transactions on Electron Devices 69 (8), 4681–4685 (2022).
Peng Wu, Joerg Appenzeller, "Explaining Steep-Slope Switching in Carbon Nanotube Dirac-Source Field-Effect Transistors," IEEE Transactions on Electron Devices 69 (9), 5270-5275 (2022).
Peng Wu, Mengyuan Li, Bo Zhou, Xiaobo Sharon Hu, Joerg Appenzeller, "Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept," IEEE Transactions on Electron Devices 69 (11), 6078-6084 (2022).
Peng Wu, Jing Kong, "Doping for ohmic contacts in 2D transistors," Nature Electronics 7, 519-520 (2024) (News & Views).
Peng Wu, Tianyi Zhang, Jiadi Zhu, Tomás Palacios, Jing Kong, "2D materials for logic device scaling," Nature Materials 23, 23-25 (2024) (Feature).
Peng Wu, "Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes," Nature Electronics 6, 836–838 (2023) (Matters Arising).
Peng Wu, Jianfeng Jiang, Lian-Mao Peng, "Setting a standard for benchmarking 2D transistors with silicon," Nature Reviews Electrical Engineering (2024) (Comment).
