Kang, Ning is a research associate professor in the School of Electronics. He obtained his B.Sc. from Nanjing University in 1997, and Ph.D. from Chinese Academy of Sciences in 2002 respectively. His research is primarily focused on studying the physics of low dimensional systems and nanoelectronic devices at low temperatures by performing high precision transport measurements. His present areas of interest include spin-orbit coupling based semiconductor nanowire devices, transport properties of ultrathin two-dimensional superconducting crystals, and graphene nanostructures for quantum devices.

Dr. Kang has published more than 30 research papers, and most of them are published in top-tier journals, such as Nature Materials, Nano Letters, ACS Nano, Nanoscale, Applied Physics Letters and Physical Review B. His research achievements are summarized as follows:

1) Electron transport study of semiconducting nanodevices: Understanding of the transport properties of semiconductor nanodevices plays a crucial role in the use of semiconducting nanostructures as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. By implementing low-temperature transport measurements with controls of electric field, magnetic field and temperature, he investigated the Josephson current, Andreev bound states and supercurrent distribution in hybrid superconductor-nanosheet devices. These results pave the way for the applications of such hybrid nanodevices in future electronics.

2) Transport properties in ultrathin two-dimensional superconducting crystals: Two-dimensional transition metal carbides are a newly emerging class of materials with superconductivity and many potential applications. He focused on the understanding the intrinsic nature of superconducting fluctuations in the 2D limit. These results demonstrate that ultrathin Mo2C crystals provide an appealing platform to gain new insights into 2D superconductivity in a clean system.

3) Quantum transport in graphene: Understanding the modification of the graphene’s electronic properties upon chemical doping is crucial to explore charged impurities scattering mechanism and potential applications of graphene. He investigated the electronic transport properties of nitrogen-doped graphene. The systematic transport measurements reveals a strong asymmetry in intervalley scattering of electrons and of holes in N-doped graphene. These results demonstrate that the carrier scattering in graphene can be effectively tuned by N dopants paving the way towards tailoring the graphene valley scattering and developing novel devices.