刘洪刚

职称:研究员

研究所:碳基电子学研究中心

研究领域:射频器件与电路、三维异质集成微系统

办公电话:010-6275 5009

电子邮件:liuhonggang[at]pku.edu.cn

工作履历/科研教育经历:

2003年在中科院微电子所获博士学位,随后在加拿大Simon Fraser大学从事InP DHBT毫米波器件方面的博士后研究;2006年加入瑞士联邦理工学院(ETH Zurich)毫米波实验室从事太赫兹电子器件的研究,实现了0.6 THz太赫兹晶体管及其毫米波集成电路;2009年受聘为中科院微电子研究所研究员、博士生导师、微波器件与集成电路研究室副主任等职位;入选中科院百人计划、江苏省高层次双创人才、江苏省六大人才高峰等人才计划;2021年入职北京大学碳基电子学研究中心担任研究员,主要从事碳基射频SoC芯片设计与三维异质集成微系统方面的研究。

先后承担国家重大专项、重点研发计划、973计划、自然基金等科技项目10余项,在IEEE Electron Device Letters、IEEE Transaction on Electron Devices、International Electron Devices Meeting(IEDM)、Microwave Journal、Electronics、Advanced Materials、Scientific Report、ACS Applied Electronic Materials、Nanotechnology、AIP Advances等学术刊物发表论文百余篇,申请发明专利66项,其中中国授权专利46项、美国PCT专利4项。相关研究成果已经在高频测量仪器、自动驾驶、宽带通信、智能感知等领域进入实用化阶段。

代表性学术论著:

期刊论文:

1.Dongze Li, Qingzhen Xia, Jiawei Huang, Hudong Chang, Bing Sun,Honggang Liu*, A 4-mW Temperature Stable 28GHz LNA with Resistive Bias Circuit for 5G Applications,Electronics2020, 9, 1225

2.Qingzhen Xia, Dongze Li, Hudong Chang, Bing Sun,Honggang Liu*,A K-band highly linear power amplifier with superior temperature stability in 90nm Trap-rich SOI CMOS technology.Microwave Journal 2020, 63(10)

3.Kailiang Huang, Minglong Zhai, Xueyuan Liu, Bing Sun, Hudong Chang, Jianhua Liu, Chao Feng,Honggang Liu*, Hf0.5Zr0.5O2ferroelectric embedded dual-gate MoS2field effect transistors for memory merged logic applications,IEEE Electron Device Letters2020, 41(10), 1600-1603.

4.Shengkai Wang, Mingmin Cao, Bing Sun, Haiou Li,Honggang Liu*, Reducing the Interface Trap Density in Al2O3/InP Stacks by Low Temperature Thermal Process.Applied Physics Express2015, 8, 091201

5.Xu Yang,Shengkai Wang,Xiong Zhang,Bing Sun,Wei Zhao,Hudong Chang,Zhenhua Zeng,Honggang Liu*, Al2O3/GeOxgate stack on germanium substrate fabricated by in situ cycling ozone oxidation method,Applied Physics Letters 2014, 105, 092101

6.Zhenxing Wang, Shibo Liang, Zhiyong Zhang,Honggang Liu, Hua Zhong, Linhui Ye, Sheng Wang, Weiwei Zhou, Jie Liu, Yabin Chen, Jin Zhang, Lianmao Peng, Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays.Advanced Materials 2014, 26(4), 645-652

7.H. G. Liu*, H. D. Chang, B. Sun, “Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures”,IEEE Transaction on Electron Devices, 2011, 58(2), 576

8.H.G. Liu, Y.P. Zeng, O. Ostinelli and C.R. Bolognesi, 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT´BVCEO > 2.5 THz-V at Room Temperature,IEEE International Electron Devices Meeting (IEDM),2007, pp. 667-670, Washington DC, USA.

9.H.G. Liu, O. Ostinelli, Y.P. Zeng and C.R. Bolognesi, “High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs with fT= 436 GHz”,IEEE Electron Device Letters, 28(10),2007, pp. 852-855.

10.H.G. Liu, N. Tao, S.P. Watkins, C.R. Bolognesi, "Extraction of the average collector velocity in high-speed “Type-II” InP-GaAsSb-InP DHBTs",IEEE Electron Device Letters, 25(12),2004, pp. 769-771.

图书章节:

1.S. K. Wang,H. G. Liu, Passivation and Characterization in High-k/III-V Interfaces, in book entitled“Nanoscale Semiconductor Devices, MEMS, and Sensors: Outlook and Challenges”, Published by Springer Publisher, New York, USA, Feb. 2017

授权专利:

1.刘洪刚、王虹,一种LTE射频功率放大器(CN201320257994.6)

2.刘洪刚、周佳辉,一种支持多频段的可调谐高效功率放大器(CN204013405U)

3.刘洪刚、夏庆贞等,共源共栅放大电路及功率放大器(ZL201610793670.2)

4.刘洪刚、夏庆贞,一种基于电容补偿技术的线性压控振荡器(CN110620552A)

5.刘洪刚、袁志鹏,一种共射共基异质结双极型晶体管(CN108598158A)

6.刘洪刚、孙兵等,一种增强型和耗尽型GaN HEMT集成结构(CN208028062U)

7.刘洪刚、李跃等,一种类Fin结构III-V族半导体场效应晶体管及其制备方法(CN201610817646.8)

8.吴磊、刘洪刚等,一种应用于毫米波雷达的串并结合馈电微带阵列天线(CN209282385U)

9.王盛凯,刘洪刚等,应用于III-V族衬底的复合栅介质层及其制作方法(PCT/CN2015/084198)

10.王盛凯、刘洪刚等,一种双栅InGaAs沟道的PMOS场效应晶体管(PCT/CN2016/112627)